N-Channel Power MOSFET, QFET® series, featuring 800V drain-source breakdown voltage and 1A continuous drain current. This surface-mount device offers a low 20 Ohm drain-source on-resistance and 2.5W maximum power dissipation. Designed for efficient switching, it boasts turn-on delay time of 10ns and fall time of 25ns. Packaged in DPAK for tape and reel, it operates from -55°C to 150°C.
PackageDPAK
Current Rating1A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQD1N80TM technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 1A |
| Current Rating | 1A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 20R |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 20R |
| Element Configuration | Single |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.3mm |
| Input Capacitance | 195pF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 20R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 800V |
| Weight | 0.26037g |
| Width | 6.1mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD1N80TM Datasheet
Download the complete datasheet for Onsemi FQD1N80TM to view detailed technical specifications.
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