
N-Channel Power MOSFET, QFET® series, featuring a 1000V drain-source breakdown voltage and 1.6A continuous drain current. This surface-mount device in a DPAK package offers a maximum drain-source on-resistance of 9Ω and a 900V DC rating. With a 5V threshold voltage and 50W maximum power dissipation, it operates from -55°C to 150°C. The component includes fast switching characteristics with turn-on delay time of 13ns and fall time of 35ns.
Onsemi FQD2N100TM technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 1.6A |
| Current Rating | 1.6A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 7.1R |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 9R |
| Element Configuration | Single |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.3mm |
| Input Capacitance | 520pF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Nominal Vgs | 5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 9R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 900V |
| Weight | 0.26037g |
| Width | 6.1mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQD2N100TM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
