N-Channel Power MOSFET, QFET® series, featuring a 1000V drain-source breakdown voltage and 1.6A continuous drain current. This surface-mount device in a DPAK package offers a maximum drain-source on-resistance of 9Ω and a 900V DC rating. With a 5V threshold voltage and 50W maximum power dissipation, it operates from -55°C to 150°C. The component includes fast switching characteristics with turn-on delay time of 13ns and fall time of 35ns.
PackageDPAK
Current Rating1.6A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQD2N100TM technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
1.6A
Current Rating
1.6A
Drain to Source Breakdown Voltage
1kV
Drain to Source Resistance
7.1R
Drain to Source Voltage (Vdss)
1kV
Drain-source On Resistance-Max
9R
Element Configuration
Single
Fall Time
35ns
Gate to Source Voltage (Vgs)
30V
Height
2.3mm
Input Capacitance
520pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Surface Mount
Nominal Vgs
5V
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
9R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
QFET®
Threshold Voltage
5V
Turn-Off Delay Time
25ns
Turn-On Delay Time
13ns
DC Rated Voltage
900V
Weight
0.26037g
Width
6.1mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FQD2N100TM Datasheet
Download the complete datasheet for Onsemi FQD2N100TM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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