The FQD2N100TM_F101 is a surface mount N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 1.6A and a gate to source voltage of 30V. The device has a fall time of 35ns and a turn-off delay time of 25ns. It is packaged in a DPAK case and is available on tape and reel.
Onsemi FQD2N100TM_F101 technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 1.6A |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 13ns |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQD2N100TM_F101 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.