N-channel MOSFET transistor for surface mount applications, featuring a 600V drain-to-source breakdown voltage and a continuous drain current of 1.9A. This component offers a low Rds On of 4.7 Ohms, a maximum power dissipation of 44W, and operates within a temperature range of -55°C to 150°C. It is packaged in a DPAK case and supplied on tape and reel, with fast switching characteristics including a 9ns turn-on delay and 28ns fall time.
PackageDPAK
Voltage650V
Current18A
Current Rating1.9A
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Technical Specifications
Onsemi FQD2N60CTM technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 1.9A |
| Current | 18A |
| Current Rating | 1.9A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 3.6R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.39mm |
| Input Capacitance | 235pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 44W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 4.7R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 9ns |
| Voltage | 650V |
| DC Rated Voltage | 600V |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD2N60CTM Datasheet
Download the complete datasheet for Onsemi FQD2N60CTM to view detailed technical specifications.
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