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Technical Specifications
Onsemi FQD2N80TM_WS technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 1.8A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 6.3R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 550pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 6.3R |
| Series | QFET™ |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Onsemi FQD2N80TM_WS Datasheet
Download the complete datasheet for Onsemi FQD2N80TM_WS to view detailed technical specifications.
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