FQD2N90TF

900V N-CH MOSFET 1.7A 7.2R DPAK Surface Mount

N-channel MOSFET, 900V drain-source breakdown voltage, 1.7A continuous drain current, and 7.2 Ohm maximum drain-source on-resistance. Features a TO-252-3 surface mount package, 50W maximum power dissipation, and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay time of 15ns and fall time of 30ns. Lead-free and RoHS compliant.

PackageTO-252-3

Current Rating1.7A

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Onsemi FQD2N90TF technical specifications.

General

Package/Case	TO-252-3
Continuous Drain Current (ID)	1.7A
Current Rating	1.7A
Drain to Source Breakdown Voltage	900V
Drain to Source Resistance	7.2R
Drain to Source Voltage (Vdss)	900V
Element Configuration	Single
Fall Time	30ns
Gate to Source Voltage (Vgs)	30V
Input Capacitance	500pF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	50W
Mount	Surface Mount
Package Quantity	2000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	2.5W
Radiation Hardening	No
Rds On Max	7.2R
RoHS Compliant	Yes
Series	QFET®
Turn-Off Delay Time	20ns
Turn-On Delay Time	15ns
DC Rated Voltage	900V
Weight	0.26037g