N-Channel Power MOSFET featuring 900V drain-source breakdown voltage and 1.7A continuous drain current. This surface-mount device offers a low 7.2Ω drain-to-source resistance (Rds On Max) and is housed in a TO-252-3 (DPAK) package. Designed for efficient switching, it exhibits typical turn-on delay of 15ns and fall time of 30ns. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is supplied on a 2500-piece tape and reel.
PackageTO-252-3
Current Rating1.7A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQD2N90TM technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 1.7A |
| Current Rating | 1.7A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 7.2R |
| Drain to Source Voltage (Vdss) | 900V |
| Element Configuration | Single |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.517mm |
| Input Capacitance | 500pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 7.2R |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 900V |
| Weight | 0.26037g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD2N90TM Datasheet
Download the complete datasheet for Onsemi FQD2N90TM to view detailed technical specifications.
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