The FQD2P40TF_F080 is a P-channel MOSFET with a maximum drain to source breakdown voltage of -400V and a continuous drain current of 1.56A. It features a drain to source resistance of 6.5R and a maximum power dissipation of 2.5W. The device is packaged in a TO-252-3 surface mount package and is rated for operation between -55°C and 150°C. It is suitable for use in a variety of applications including power management and switching circuits.
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FQD2P40TF_F080 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 1.56A |
| Drain to Source Breakdown Voltage | -400V |
| Drain to Source Resistance | 6.5R |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 350pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 6.5R |
| Series | QFET™ |
| Turn-Off Delay Time | 22ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD2P40TF_F080 Datasheet
Download the complete datasheet for Onsemi FQD2P40TF_F080 to view detailed technical specifications.
No datasheet is available for this part.
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