
N-channel MOSFET, 60V drain-source breakdown voltage, 24A continuous drain current, and 39mΩ maximum drain-source on-resistance. Features a 2.5V threshold voltage, 1.04nF input capacitance, 110ns fall time, and 55ns turn-off delay time. Surface mountable in a TO-252 package, this component offers 44W maximum power dissipation and operates from -55°C to 150°C. RoHS compliant and lead-free.
Onsemi FQD30N06LTM technical specifications.
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 24A |
| Current Rating | 24A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 39mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.04nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 44W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 39mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 55ns |
| DC Rated Voltage | 60V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQD30N06LTM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
