The FQD3N40TM is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a maximum power dissipation of 30W. It has a drain to source breakdown voltage of 400V and a drain to source resistance of 3.4 ohms. The device is RoHS compliant and lead free, packaged in a tape and reel format with 2500 units per package. The FQD3N40TM is suitable for use in a variety of applications including power management and switching circuits.
PackageTO-252-3
Current Rating2A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQD3N40TM technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 2A |
| Current Rating | 2A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 3.4R |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 230pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 3.4R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 10ns |
| DC Rated Voltage | 400V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD3N40TM Datasheet
Download the complete datasheet for Onsemi FQD3N40TM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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