P-channel Power MOSFET featuring a -500V drain-source breakdown voltage and a continuous drain current of -2.1A. This surface-mount device offers a low drain-source on-resistance of 4.9 Ohms. Key specifications include a 12ns turn-on delay, 35ns turn-off delay, and 45ns fall time. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 50W. Packaged in DPAK for tape and reel applications.
PackageDPAK
Voltage400V
Current18A
Current Rating-2.1A
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Technical Specifications
Onsemi FQD3P50TM technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
2.1A
Current
18A
Current Rating
-2.1A
Drain to Source Breakdown Voltage
-500V
Drain to Source Resistance
4.9R
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
4.9R
Fall Time
45ns
Gate to Source Voltage (Vgs)
30V
Height
2.39mm
Input Capacitance
660pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Surface Mount
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
4.9R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
QFET®
Threshold Voltage
-5V
Turn-Off Delay Time
35ns
Turn-On Delay Time
12ns
Voltage
400V
DC Rated Voltage
-500V
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FQD3P50TM Datasheet
Download the complete datasheet for Onsemi FQD3P50TM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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