500V P-Channel MOSFET, TO-252 3L (DPAK) surface mount device. Features a continuous drain current of 2.1A and a drain-source breakdown voltage of -500V. Offers a maximum drain-source on-resistance of 4.9 Ohms at a gate-source voltage of 30V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 50W. This RoHS compliant component is supplied on a 30000-piece tape and reel.
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
Quick Jump:
Technical Specifications
Onsemi FQD3P50TM_F085 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 2.1A |
| Drain to Source Breakdown Voltage | -500V |
| Drain to Source Resistance | 4.9R |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 4.9R |
| Element Configuration | Single |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 660pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 4.9R |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, QFET® |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.26037g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD3P50TM_F085 Datasheet
Download the complete datasheet for Onsemi FQD3P50TM_F085 to view detailed technical specifications.
No datasheet is available for this part.
Product Images
