The FQD4N20LTM is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 30W and a maximum drain to source voltage of 200V. The device is lead free and RoHS compliant, packaged in a tape and reel with 2500 units per package.
PackageTO-252-3
Current Rating3.2A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQD4N20LTM technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 3.2A |
| Current Rating | 3.2A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 1.35R |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 310pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 1.35R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 15ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD4N20LTM Datasheet
Download the complete datasheet for Onsemi FQD4N20LTM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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