
N-Channel MOSFET, 200V Drain-Source Breakdown Voltage, 3A Continuous Drain Current, and 1.4Ω Max Drain-Source On-Resistance. Features include a 25ns fall time, 7ns turn-on/off delay times, and 220pF input capacitance. This surface-mount component operates within a -55°C to 150°C temperature range and has a 2.5W maximum power dissipation. Packaged in a TO-252-3 case on a 2500-piece tape and reel, it is lead-free and RoHS compliant.
Onsemi FQD4N20TM technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 3A |
| Current Rating | 3A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 1.4R |
| Element Configuration | Single |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 220pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 1.4R |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 7ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 200V |
| Weight | 0.26037g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQD4N20TM to view detailed technical specifications.
No datasheet is available for this part.
