N-Channel Power MOSFET, QFET® series, featuring a 250V drain-source breakdown voltage and 3A continuous drain current. This surface-mount component offers a low drain-source on-resistance of 1.75Ω. Designed for efficient switching, it exhibits turn-on delay time of 6.8ns and turn-off delay time of 6.4ns, with a fall time of 22ns. Packaged in a TO-252-3 (DPAK) case, it supports a maximum power dissipation of 37W and operates within a temperature range of -55°C to 150°C. This lead-free, RoHS-compliant component is supplied on a 2500-piece tape and reel.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FQD4N25TM-WS technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 1.75R |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 1.75R |
| Element Configuration | Single |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 200pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 37W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 1.75R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 6.4ns |
| Turn-On Delay Time | 6.8ns |
| Weight | 0.26037g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD4N25TM-WS Datasheet
Download the complete datasheet for Onsemi FQD4N25TM-WS to view detailed technical specifications.
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