P-Channel MOSFET featuring a -250V drain-source breakdown voltage and 3.1A continuous drain current. Surface mountable in a TO-252-3 (DPAK) package, this single-channel transistor offers a maximum drain-source on-resistance of 2.1Ω. It operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 45W. Key switching characteristics include a 9.5ns turn-on delay and 27ns fall time.
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
Power45W
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Technical Specifications
Onsemi FQD4P25TM-WS technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 3.1A |
| Drain to Source Breakdown Voltage | -250V |
| Drain to Source Resistance | 2.1R |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 2.1R |
| Element Configuration | Single |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.39mm |
| Input Capacitance | 420pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 45W |
| Radiation Hardening | No |
| Rds On Max | 2.1R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 9.5ns |
| Weight | 0.26037g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD4P25TM-WS Datasheet
Download the complete datasheet for Onsemi FQD4P25TM-WS to view detailed technical specifications.
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