N-channel MOSFET, 500V drain-source breakdown voltage, 3.5A continuous drain current. Features 1.8 Ohm drain-source resistance (Rds On Max) and 50W maximum power dissipation. Operates with a 30V gate-source voltage and offers fast switching times with turn-on delay of 13ns and fall time of 35ns. Packaged in a TO-252-3 (DPAK) surface-mount package, this RoHS compliant component is supplied on tape and reel.
PackageTO-252-3
Current Rating3.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQD5N50TM technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 3.5A |
| Current Rating | 3.5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1.8R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 610pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 1.8R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD5N50TM Datasheet
Download the complete datasheet for Onsemi FQD5N50TM to view detailed technical specifications.
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