P-channel Power MOSFET featuring a -200V drain-source breakdown voltage and a continuous drain current of -3.7A. This surface-mount device offers a low drain-source on-resistance of 1.4Ω and a maximum power dissipation of 45W. Designed with a TO-252 package, it boasts fast switching characteristics with turn-on delay time of 9ns and fall time of 25ns. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is ideal for demanding power applications.
PackageTO-252
Current Rating-3.7A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQD5P20TM technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | -3.7A |
| Current Rating | -3.7A |
| Drain to Source Breakdown Voltage | -200V |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 1.4R |
| Element Configuration | Single |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.39mm |
| Input Capacitance | 430pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 1.4R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 9ns |
| DC Rated Voltage | -200V |
| Weight | 0.26037g |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD5P20TM Datasheet
Download the complete datasheet for Onsemi FQD5P20TM to view detailed technical specifications.
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