The FQD630TM is a surface-mount N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 7A and a drain to source breakdown voltage of 200V. The device features a low drain to source resistance of 400mR and a maximum power dissipation of 46W. It is lead-free and RoHS compliant, packaged in a TO-252-3 case and available in tape and reel packaging.
PackageTO-252-3
Current Rating7A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQD630TM technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 7A |
| Current Rating | 7A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 64ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 550pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 46W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 400mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 47ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD630TM Datasheet
Download the complete datasheet for Onsemi FQD630TM to view detailed technical specifications.
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