
N-Channel Power MOSFET, QFET™ series, featuring a 250V drain-source breakdown voltage and 4.4A continuous drain current. This surface-mount component offers a low 1Ω drain-to-source resistance (Rds On Max) and operates within a temperature range of -55°C to 150°C. Designed for efficient switching, it exhibits fast turn-on and turn-off delay times of 8ns and 7.5ns respectively, with a fall time of 30ns. Packaged in a TO-252-3 (DPAK) case, this RoHS compliant and lead-free MOSFET is supplied on a 2500-piece tape and reel.
Onsemi FQD6N25TM technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 4.4A |
| Current Rating | 4.4A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 250V |
| Element Configuration | Single |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 300pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 1R |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 7.5ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | 250V |
| Weight | 0.26037g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQD6N25TM to view detailed technical specifications.
No datasheet is available for this part.
