N-Channel Power MOSFET, QFET® series, featuring a 500V drain-source breakdown voltage and 4.5A continuous drain current. This surface-mount device offers a low 1.2Ω drain-source on-resistance and is housed in a TO-252-3 (DPAK) package. With a maximum power dissipation of 2.5W and operating temperatures from -55°C to 150°C, it includes fast switching characteristics with turn-on delay of 10ns and fall time of 45ns. This RoHS compliant component is supplied on a 2500-piece tape and reel.
PackageTO-252-3
Current Rating4.5A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FQD6N50CTM technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 4.5A |
| Current Rating | 4.5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 700pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 500V |
| Weight | 0.26037g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD6N50CTM Datasheet
Download the complete datasheet for Onsemi FQD6N50CTM to view detailed technical specifications.
No datasheet is available for this part.
Product Images
