The FQD6N60CTM-WS is a surface mount N-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 600V and a continuous drain current of 4A. The device is packaged in a TO-252-3 package and is compliant with RoHS regulations. The FQD6N60CTM-WS has a maximum power dissipation of 80W and a gate to source voltage of 30V.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power80W
Quick Jump:
Technical Specifications
Onsemi FQD6N60CTM-WS technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 810pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 80W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 80W |
| Rds On Max | 2R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 45ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD6N60CTM-WS Datasheet
Download the complete datasheet for Onsemi FQD6N60CTM-WS to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
