The FQD7N10TF is a N-channel MOSFET with a drain to source breakdown voltage of 100V and a continuous drain current of 5.8A. It has a power dissipation of 2.5W and a gate to source voltage of 25V. The device is packaged in a DPAK case and is available on tape and reel. It operates over a temperature range of -55°C to 150°C, but is not RoHS compliant.
PackageDPAK
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FQD7N10TF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 5.8A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 350mR |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 25V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 13ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQD7N10TF Datasheet
Download the complete datasheet for Onsemi FQD7N10TF to view detailed technical specifications.
No datasheet is available for this part.