
N-Channel Power MOSFET, Logic Level, QFET® series, designed for surface mounting in a TO-252-3 (DPAK) package. Features a 200V drain-source breakdown voltage and a continuous drain current of 5.5A. Offers a low on-resistance of 750mΩ and a maximum power dissipation of 2.5W. Operates across a wide temperature range from -55°C to 150°C, with fast switching characteristics including a 12ns turn-on delay and 65ns fall time. This RoHS compliant component is supplied on a 2500-piece tape and reel.
Onsemi FQD7N20LTM technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 5.5A |
| Current Rating | 5.5A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 750mR |
| Drain to Source Voltage (Vdss) | 200V |
| Element Configuration | Single |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 500pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 750mR |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 200V |
| Weight | 0.26037g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQD7N20LTM to view detailed technical specifications.
No datasheet is available for this part.