FQD7N20TM

200V N-CH MOSFET, 5.3A, 690mR, DPAK, SMT

N-channel MOSFET, 200V Drain-Source Voltage (Vdss), 5.3A Continuous Drain Current (ID). Features 690mΩ maximum Drain-Source On-Resistance (Rds On) and 45W maximum power dissipation. Surface mount TO-252-3 (DPAK) package with 35ns fall time and 15ns turn-off delay time. Operates from -55°C to 150°C, with 400pF input capacitance and 30V Gate-Source Voltage (Vgs) rating. Lead-free and RoHS compliant.

PackageTO-252-3

Current Rating5.3A

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Onsemi FQD7N20TM technical specifications.

General

Package/Case	TO-252-3
Continuous Drain Current (ID)	5.3A
Current Rating	5.3A
Drain to Source Breakdown Voltage	200V
Drain to Source Resistance	690mR
Drain to Source Voltage (Vdss)	200V
Element Configuration	Single
Fall Time	35ns
Gate to Source Voltage (Vgs)	30V
Input Capacitance	400pF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	45W
Mount	Surface Mount
Package Quantity	2500
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	2.5W
Rds On Max	690mR
RoHS Compliant	Yes
Series	QFET®
Turn-Off Delay Time	15ns
DC Rated Voltage	200V
Weight	0.26037g