The FQD7P20TM_F080 is a P-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 5.7A and a drain to source breakdown voltage of -200V. The device features a drain to source resistance of 690mR and a gate to source voltage of 30V. It is packaged in a TO-252-3 surface mount package and is rated for a maximum power dissipation of 2.5W.
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FQD7P20TM_F080 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 5.7A |
| Drain to Source Breakdown Voltage | -200V |
| Drain to Source Resistance | 690mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 42ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 770pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 690mR |
| Series | QFET™ |
| Turn-Off Delay Time | 30ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD7P20TM_F080 Datasheet
Download the complete datasheet for Onsemi FQD7P20TM_F080 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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