N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 13A continuous drain current. This single-element MOSFET offers a low on-resistance of 390mΩ at 10Vgs and 480mΩ maximum, with a maximum power dissipation of 195W. Designed for through-hole mounting in an I2PAK package, it operates within a temperature range of -55°C to 150°C and includes fast switching characteristics with turn-on delay of 25ns and fall time of 100ns. The component is RoHS compliant and lead-free.
PackageTO-262-3
Current Rating13A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQI13N50CTU technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 13A |
| Current Rating | 13A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 390mR |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 100ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.055nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 195W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 195W |
| Radiation Hardening | No |
| Rds On Max | 480mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 130ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 500V |
| Weight | 2.084g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQI13N50CTU Datasheet
Download the complete datasheet for Onsemi FQI13N50CTU to view detailed technical specifications.
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