P-channel MOSFET with a 60V drain-source breakdown voltage and 17A continuous drain current. Features a low 120mΩ Rds On, 900pF input capacitance, and fast switching times with turn-on delay of 13ns and turn-off delay of 22ns. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 79W. Packaged in a TO-262-3 (I2PAK) through-hole mount configuration, this RoHS compliant component is supplied on a rail.
PackageTO-262-3
Current Rating-17A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQI17P06TU technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 17A |
| Current Rating | -17A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 120mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 900pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 79W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.75W |
| Radiation Hardening | No |
| Rds On Max | 120mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | -60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQI17P06TU Datasheet
Download the complete datasheet for Onsemi FQI17P06TU to view detailed technical specifications.
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