P-channel MOSFET with 500V drain-source breakdown voltage and 1.5A continuous drain current. Features low on-resistance of 10.5 Ohms, 350pF input capacitance, and fast switching times with turn-on delay of 9ns and fall time of 30ns. Packaged in a TO-262-3 (I2PAK) through-hole mount, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 63W.
PackageTO-262-3
Current Rating-1.5A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQI1P50TU technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 1.5A |
| Current Rating | -1.5A |
| Drain to Source Breakdown Voltage | -500V |
| Drain to Source Resistance | 10.5R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 350pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 63W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.13W |
| Radiation Hardening | No |
| Rds On Max | 10.5R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 9ns |
| DC Rated Voltage | -500V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQI1P50TU Datasheet
Download the complete datasheet for Onsemi FQI1P50TU to view detailed technical specifications.
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