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Technical Specifications
Onsemi FQI2P25TU technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 2.3A |
| Current Rating | -2.3A |
| Drain to Source Breakdown Voltage | -250V |
| Drain to Source Resistance | 4R |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 250pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.13W |
| Rds On Max | 4R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 12ns |
| DC Rated Voltage | -250V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQI2P25TU Datasheet
Download the complete datasheet for Onsemi FQI2P25TU to view detailed technical specifications.
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