The FQI32N12V2TU is a 32A, 120V N-CHANNEL MOSFET with a drain to source resistance of 50mR. It is packaged in a TO-262-3 package and is suitable for through hole mounting. The device operates over a temperature range of -55°C to 175°C and is RoHS compliant. The FQI32N12V2TU has a maximum power dissipation of 150W and a turn-off delay time of 114ns.
PackageTO-262-3
Current Rating32A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQI32N12V2TU technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 32A |
| Current Rating | 32A |
| Drain to Source Breakdown Voltage | 120V |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | 120V |
| Fall Time | 158ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.86nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.75W |
| Rds On Max | 50mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 114ns |
| DC Rated Voltage | 120V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQI32N12V2TU Datasheet
Download the complete datasheet for Onsemi FQI32N12V2TU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.