The FQI32N20CTU is a TO-262-3 packaged N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 156W and a maximum drain to source breakdown voltage of 200V. The device is lead free and RoHS compliant, with a package quantity of 50 units per rail/Tube packaging. The FQI32N20CTU has a continuous drain current of 28A and a current rating of 32A, with a maximum gate to source voltage of 30V.
PackageTO-262-3
Current Rating32A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQI32N20CTU technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 28A |
| Current Rating | 32A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 82mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 210ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.22nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 156W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Rds On Max | 82mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 245ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQI32N20CTU Datasheet
Download the complete datasheet for Onsemi FQI32N20CTU to view detailed technical specifications.
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