The Onsemi FQI34P10TU is a P-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 175°C. It features a drain to source breakdown voltage of -100V and a drain to source resistance of 49mR. The device has a maximum power dissipation of 155W and a continuous drain current of 33.5A. It is packaged in a TO-262-3 through-hole package and is RoHS compliant.
PackageTO-262-3
MountingThrough Hole
PolarityP-CHANNEL
Power3.75W
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Technical Specifications
Onsemi FQI34P10TU technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 33.5A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 49mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 210ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 2.91nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 155W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.75W |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 160ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQI34P10TU Datasheet
Download the complete datasheet for Onsemi FQI34P10TU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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