The FQI3N90TU is a high-voltage N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 900V and a continuous drain current of 3.6A. The device is packaged in a TO-262-3 case and is suitable for through hole mounting. It is lead free and RoHS compliant, making it suitable for a wide range of applications.
PackageTO-262-3
Current Rating3.6A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQI3N90TU technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 3.6A |
| Current Rating | 3.6A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 4.25R |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 910pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 130W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Rds On Max | 4.25R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 40ns |
| DC Rated Voltage | 900V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQI3N90TU Datasheet
Download the complete datasheet for Onsemi FQI3N90TU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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