The FQI3P20TU is a P-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 2.8A and a drain to source breakdown voltage of -200V. The device is packaged in a TO-262-3 package and is lead free. It is RoHS compliant and has a maximum power dissipation of 52W.
PackageTO-262-3
Current Rating-2.8A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQI3P20TU technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 2.8A |
| Current Rating | -2.8A |
| Drain to Source Breakdown Voltage | -200V |
| Drain to Source Resistance | 2.7R |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 250pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.13W |
| Rds On Max | 2.7R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 12ns |
| DC Rated Voltage | -200V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQI3P20TU Datasheet
Download the complete datasheet for Onsemi FQI3P20TU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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