The FQI3P50TU is a P-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current rating of 2.7A and a maximum power dissipation of 85W. The device features a drain to source breakdown voltage of -500V and a drain to source resistance of 4.9R. It is packaged in a TO-262-3 package and is mounted through a hole. The FQI3P50TU is lead free and RoHS compliant.
PackageTO-262-3
Current Rating-2.7A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQI3P50TU technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 2.7A |
| Current Rating | -2.7A |
| Drain to Source Breakdown Voltage | -500V |
| Drain to Source Resistance | 4.9R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 660pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 85W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.13W |
| Rds On Max | 4.9R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 35ns |
| DC Rated Voltage | -500V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQI3P50TU Datasheet
Download the complete datasheet for Onsemi FQI3P50TU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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