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Technical Specifications
Onsemi FQI4N20LTU technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 3.8A |
| Current Rating | 3.8A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 1.35R |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 310pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Rds On Max | 1.35R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 15ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQI4N20LTU Datasheet
Download the complete datasheet for Onsemi FQI4N20LTU to view detailed technical specifications.
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