N-channel MOSFET with 300V drain-source breakdown voltage and 5.4A continuous drain current. Features low on-resistance of 680mΩ, 430pF input capacitance, and fast switching times with 11ns turn-on delay and 27ns fall time. Housed in a TO-262-3 (I2PAK) package for through-hole mounting, this component offers 70W maximum power dissipation and operates across a wide temperature range of -55°C to 150°C. It is RoHS compliant and lead-free.
PackageTO-262-3
Current Rating5.4A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQI5N30TU technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 5.4A |
| Current Rating | 5.4A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 680mR |
| Drain to Source Voltage (Vdss) | 300V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 430pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Radiation Hardening | No |
| Rds On Max | 900mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 300V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQI5N30TU Datasheet
Download the complete datasheet for Onsemi FQI5N30TU to view detailed technical specifications.
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