The FQI5N50CTU is an N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 73W and a drain to source breakdown voltage of 500V. The device is packaged in a TO-262-3 package and is available in a lead-free configuration. The FQI5N50CTU is RoHS compliant and features a drain to source resistance of 1.14R and a gate to source voltage of 30V.
PackageTO-262-3
Current Rating5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQI5N50CTU technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 5A |
| Current Rating | 5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1.14R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 48ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 625pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 73W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 73W |
| Rds On Max | 1.4R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 50ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQI5N50CTU Datasheet
Download the complete datasheet for Onsemi FQI5N50CTU to view detailed technical specifications.
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