N-Channel Power MOSFET, 600V Drain-Source Breakdown Voltage, 4.5A Continuous Drain Current, 2.5 Ohm Rds On. Features include 10ns turn-on delay, 46ns fall time, and 38ns turn-off delay. Operates from -55°C to 150°C with a maximum power dissipation of 100W. Packaged in a TO-262-3 (I2PAK) through-hole mount, this RoHS compliant component offers 670pF input capacitance.
PackageTO-262-3
Current Rating5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQI5N60CTU technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 4.5A |
| Current Rating | 5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 2.5R |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 46ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.01mm |
| Input Capacitance | 670pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Radiation Hardening | No |
| Rds On Max | 2.5R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 600V |
| Weight | 2.084g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQI5N60CTU Datasheet
Download the complete datasheet for Onsemi FQI5N60CTU to view detailed technical specifications.
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