The FQI5P10TU is a P-CHANNEL MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 40W and a maximum drain to source breakdown voltage of -100V. The device is RoHS compliant and has a lead free package. It features a drain to source resistance of 1.05R and a turn-off delay time of 12ns. The FQI5P10TU is packaged in a TO-262-3 package and is available in a quantity of 50 units per rail/tube packaging.
PackageTO-262-3
Current Rating-4.5A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQI5P10TU technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 4.5A |
| Current Rating | -4.5A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 1.05R |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 250pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.75W |
| Rds On Max | 1.05R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 12ns |
| DC Rated Voltage | -100V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQI5P10TU Datasheet
Download the complete datasheet for Onsemi FQI5P10TU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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