N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 7.5A continuous drain current. This QFET® series component offers a low 1.2Ω Rds On resistance and a maximum power dissipation of 147W. Packaged in a TO-262-3 (I2PAK) through-hole mount configuration, it operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free, this single-element MOSFET includes fast switching characteristics with turn-on delay time of 16.5ns and fall time of 64.5ns.
PackageTO-262-3
Current Rating8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQI8N60CTU technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 7.5A |
| Current Rating | 8A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 64.5ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.255nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 147W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 81ns |
| Turn-On Delay Time | 16.5ns |
| DC Rated Voltage | 600V |
| Weight | 2.084g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQI8N60CTU Datasheet
Download the complete datasheet for Onsemi FQI8N60CTU to view detailed technical specifications.
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