N-Channel Power MOSFET, QFET® series, featuring a 500V drain-source breakdown voltage and 40A continuous drain current. This single-element transistor offers a low 110mΩ drain-source on-resistance and a maximum power dissipation of 460W. Packaged in a TO-264 through-hole mount, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 140ns turn-on delay and 250ns fall time.
PackageTO-264
Current Rating40A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQL40N50 technical specifications.
General
| Package/Case | TO-264 |
| Continuous Drain Current (ID) | 40A |
| Current Rating | 40A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 250ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 26mm |
| Input Capacitance | 7.5nF |
| Lead Free | Lead Free |
| Length | 20mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 460W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 460W |
| Radiation Hardening | No |
| Rds On Max | 110mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 350ns |
| Turn-On Delay Time | 140ns |
| DC Rated Voltage | 500V |
| Weight | 6.756g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQL40N50 Datasheet
Download the complete datasheet for Onsemi FQL40N50 to view detailed technical specifications.
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