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Technical Specifications
Onsemi FQN1N50CBU technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 380mA |
| Current Rating | 380mA |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 6R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 195pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.08W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 890mW |
| Rds On Max | 6R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 20ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQN1N50CBU Datasheet
Download the complete datasheet for Onsemi FQN1N50CBU to view detailed technical specifications.
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