PackageTO-92-3
MountingThrough Hole
PolarityN-CHANNEL
Power1W
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Technical Specifications
Onsemi FQN1N60CBU technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 300mA |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 9.3R |
| Drain to Source Voltage (Vdss) | 600V |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 170pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Rds On Max | 11.5R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 13ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQN1N60CBU Datasheet
Download the complete datasheet for Onsemi FQN1N60CBU to view detailed technical specifications.
No datasheet is available for this part.