N-Channel Power MOSFET, QFET® series, featuring a 600V drain-source breakdown voltage and 300mA continuous drain current. This through-hole component offers a maximum drain-source on-resistance of 11.5 Ohms and a threshold voltage of 4V. Designed with a TO-92 package, it operates within a temperature range of -55°C to 150°C and boasts a 1W power dissipation. Key switching characteristics include a 7ns turn-on delay and a 27ns fall time.
PackageTO-92
MountingThrough Hole
PolarityN-CHANNEL
Power1W
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Technical Specifications
Onsemi FQN1N60CTA technical specifications.
General
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 300mA |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 9.3R |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 11.5R |
| Element Configuration | Single |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 5.33mm |
| Input Capacitance | 470pF |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 7ns |
| Weight | 0.24g |
| Width | 4.19mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQN1N60CTA Datasheet
Download the complete datasheet for Onsemi FQN1N60CTA to view detailed technical specifications.
No datasheet is available for this part.
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