N-channel power MOSFET, 500V drain-source breakdown voltage, 350mA continuous drain current, and 5.3 Ohm drain-source resistance. Features include a 25ns fall time, 6ns turn-on delay, and 10ns turn-off delay. This through-hole component offers a maximum power dissipation of 1.5W and operates within a temperature range of -55°C to 150°C. Packaged in TO-226-3, it is lead-free and RoHS compliant.
PackageTO-226-3
Current Rating350mA
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQNL2N50BTA technical specifications.
General
| Package/Case | TO-226-3 |
| Continuous Drain Current (ID) | 350mA |
| Current Rating | 350mA |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 5.3R |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 8mm |
| Input Capacitance | 230pF |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.5W |
| Rds On Max | 5.3R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 6ns |
| DC Rated Voltage | 500V |
| Weight | 0.3711027g |
| Width | 3.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQNL2N50BTA Datasheet
Download the complete datasheet for Onsemi FQNL2N50BTA to view detailed technical specifications.
No datasheet is available for this part.