N-Channel MOSFET, 600V Drain to Source Voltage, 9.5A Continuous Drain Current, 730mΩ Drain to Source Resistance. Features a TO-220AB package for through-hole mounting, 156W maximum power dissipation, and a 4V nominal gate-source voltage. Offers fast switching with turn-on delay of 23ns and fall time of 77ns. Operating temperature range from -55°C to 150°C.
PackageTO-220AB
Current Rating9.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP10N60C technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 9.5A |
| Current Rating | 9.5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 730mR |
| Drain to Source Voltage (Vdss) | 600V |
| Dual Supply Voltage | 600V |
| Element Configuration | Single |
| Fall Time | 77ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 8.79mm |
| Input Capacitance | 2.04nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 156W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 156W |
| Rds On Max | 730mR |
| Reach SVHC Compliant | No |
| Series | QFET® |
| Termination | Through Hole |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 144ns |
| Turn-On Delay Time | 23ns |
| DC Rated Voltage | 600V |
| Weight | 1.8g |
| Width | 4.67mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQP10N60C Datasheet
Download the complete datasheet for Onsemi FQP10N60C to view detailed technical specifications.
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