The FQP11N40 is an N-channel MOSFET with a drain to source breakdown voltage of 400V and a continuous drain current of 11.4A. It has a maximum operating temperature range of -55°C to 150°C and a maximum power dissipation of 147W. The device is packaged in a TO-220-3 case and is lead free. It is RoHS compliant and features a gate to source voltage of 30V and an input capacitance of 1.4nF.
PackageTO-220-3
Current Rating11.4A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP11N40 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 11.4A |
| Current Rating | 11.4A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 480mR |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 147W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 147W |
| Rds On Max | 480mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 60ns |
| DC Rated Voltage | 400V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP11N40 Datasheet
Download the complete datasheet for Onsemi FQP11N40 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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