N-Channel Power MOSFET featuring 400V drain-source breakdown voltage and 10.5A continuous drain current. This TO-220AB packaged device offers a low 530mΩ drain-source on-resistance and 135W maximum power dissipation. Ideal for through-hole mounting, it operates across a wide temperature range of -55°C to 150°C and includes fast switching characteristics with a 14ns turn-on delay.
PackageTO-220AB
Voltage400V
Current10A
Current Rating10.5A
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Technical Specifications
Onsemi FQP11N40C technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 10.5A |
| Current | 10A |
| Current Rating | 10.5A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 530mR |
| Drain to Source Voltage (Vdss) | 400V |
| Drain-source On Resistance-Max | 530MR |
| Fall Time | 81ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.4mm |
| Input Capacitance | 1.09nF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 135W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 135W |
| Rds On Max | 530mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 81ns |
| Turn-On Delay Time | 14ns |
| Voltage | 400V |
| DC Rated Voltage | 400V |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP11N40C Datasheet
Download the complete datasheet for Onsemi FQP11N40C to view detailed technical specifications.
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